Manufacturer Part Number
FDN361AN
Manufacturer
Fairchild (onsemi)
Introduction
The FDN361AN is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
30V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
100mOhm Maximum On-State Resistance (Rds(on)) at 1.8A, 10V
8A Continuous Drain Current (Id) at 25°C
220pF Maximum Input Capacitance (Ciss) at 15V
500mW Maximum Power Dissipation at 25°C
N-Channel MOSFET with 3V Maximum Gate Threshold Voltage (Vgs(th)) at 250μA
Product Advantages
Low on-state resistance for efficient power conversion
Wide operating temperature range of -55°C to 150°C
Supports high drain voltages up to 30V
Compact SOT-23-3 surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 100mOhm
Continuous Drain Current (Id): 1.8A
Input Capacitance (Ciss): 220pF
Power Dissipation: 500mW
Gate Threshold Voltage (Vgs(th)): 3V
Quality and Safety Features
RoHS3 compliant
Reliable PowerTrench MOSFET technology
Compatibility
SOT-23-3 surface mount package
Application Areas
Power management circuits
Switch-mode power supplies
Motor control
LED lighting
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose
Excellent power efficiency due to low on-state resistance
Wide operating temperature range for harsh environments
High drain voltage capability for various power applications
Compact and easy to integrate surface mount package
Reliable and RoHS-compliant design