Manufacturer Part Number
FDN361BN
Manufacturer
onsemi
Introduction
The FDN361BN is a discrete N-channel power MOSFET transistor from onsemi, designed for a variety of power switching and control applications.
Product Features and Performance
30V drain-to-source voltage rating
110mΩ maximum on-resistance at 1.4A, 10V
4A continuous drain current at 25°C
193pF maximum input capacitance at 15V
500mW maximum power dissipation
Product Advantages
Efficient power switching performance
Low on-resistance for low conduction losses
Compact SOT-23-3 surface mount package
Key Technical Parameters
Vdss: 30V
Vgs(max): ±20V
Rds(on): 110mΩ @ 1.4A, 10V
Id(cont): 1.4A @ 25°C
Ciss: 193pF @ 15V
Quality and Safety Features
RoHS3 compliant
Suitable for a wide operating temperature range of -55°C to 150°C
Compatibility
Compatible with various power electronics and control applications
Application Areas
Suitable for power switching, control, and amplification circuits
Commonly used in power supplies, motor drives, and other power electronics
Product Lifecycle
Currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose
Efficient power switching performance
Low on-resistance for low conduction losses
Compact surface mount package
Wide operating temperature range
RoHS3 compliance for environmental safety
FDN363N-NLAMI Semiconductor/onsemi
FDN361APSIPUSEMI