FDN361AN - onsemi

Manufacturer Part Number

FDN361AN

Manufacturer

onsemi

Introduction

N-channel MOSFET transistor

Part of the PowerTrench series

Product Features and Performance

Drain to Source Voltage (Vdss): 30 V

Maximum Gate-Source Voltage (Vgs Max): ±20 V

On-State Resistance (Rds(on)) Max: 100 mOhm @ 1.8 A, 10 V

Continuous Drain Current (Id) @ 25°C: 1.8 A

Input Capacitance (Ciss) Max: 220 pF @ 15 V

Power Dissipation (Max): 500 mW

Product Advantages

Low on-state resistance for improved efficiency

Fast switching performance

High current capability

Key Technical Parameters

MOSFET Technology: N-Channel

Threshold Voltage (Vgs(th)) Max: 3 V @ 250 A

Drive Voltage Range: 4.5 V (Max Rds(on)), 10 V (Min Rds(on))

Gate Charge (Qg) Max: 4 nC @ 5 V

Quality and Safety Features

Operating Temperature Range: -55°C to 150°C

Manufacturer's Packaging: SOT-23-3

Mounting Type: Surface Mount

Compatibility

Package: TO-236-3, SC-59, SOT-23-3

Application Areas

Power management circuits

Switching applications

Motor control

Battery-powered devices

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacements and upgrades may be available from the manufacturer.

Key Reasons to Choose This Product

Excellent performance-to-cost ratio

Reliable and robust design

Suitable for a wide range of power management and switching applications

Compact surface-mount package for space-constrained designs