Manufacturer Part Number
FDMS8050ET30
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-Channel MOSFET transistor designed for power management and conversion applications.
Product Features and Performance
Low on-resistance (Rds(on)) of 0.65 mΩ at 55A and 10V
High continuous drain current (Id) of 55A at 25°C (Ta) and 423A at 100°C (Tc)
Wide operating temperature range of -55°C to 175°C (TJ)
Low gate charge (Qg) of 285 nC at 10V
High input capacitance (Ciss) of 22,610 pF at 15V
Product Advantages
Excellent efficiency and thermal performance
Optimized for high-current, high-power applications
Reliable and durable design
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 3V at 750A
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Quality and Safety Features
Robust design for reliable operation
Complies with industry safety and quality standards
Compatibility
Suitable for a wide range of power management and conversion applications
Application Areas
Power supplies
Motor drives
Inverters
Power conversion circuits
Product Lifecycle
Currently available
No information on discontinuation or replacement
Several Key Reasons to Choose This Product
Excellent efficiency and thermal performance
High current handling capability
Wide operating temperature range
Optimized for high-power applications
Reliable and durable design
FDMS8320L MOSFairchild (onsemi)