Manufacturer Part Number
FDMS8026S
Manufacturer
onsemi
Introduction
The FDMS8026S is a high-performance N-Channel MOSFET transistor designed for power management and control applications.
Product Features and Performance
30V Drain to Source Voltage (Vdss)
3mOhm Maximum On-Resistance (Rds(on)) at 19A, 10V
19A Continuous Drain Current (Id) at 25°C
2280pF Maximum Input Capacitance (Ciss) at 15V
5W Power Dissipation at 25°C, 41W at Case Temperature
Product Advantages
High efficiency power conversion
Low on-resistance for reduced power losses
Fast switching for improved system response
Compact 8-PQFN (5x6) package
Key Technical Parameters
N-Channel MOSFET
30V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
3V Maximum Gate Threshold Voltage (Vgs(th)) at 1mA
37nC Maximum Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
Operating temperature range of -55°C to 150°C
Compatibility
Surface mount package
Compatible with standard MOSFET drivers
Application Areas
Power supplies
Motor drives
Power inverters
General power management and control
Product Lifecycle
No information on discontinuation or replacements
Key Reasons to Choose
High efficiency and low on-resistance for improved power conversion
Fast switching for responsive power control
Compact package for space-constrained designs
Wide operating temperature range for diverse applications
FDMS8050onsemiMOSFET N-CHANNEL 30V 55A 8PQFN