Manufacturer Part Number
FDMS8050ET30
Manufacturer
onsemi
Introduction
The FDMS8050ET30 is a high-performance N-Channel MOSFET transistor from onsemi. It is designed for a wide range of power management and control applications.
Product Features and Performance
30V Drain-to-Source Voltage
65mOhm Maximum On-Resistance at 55A, 10V
55A Continuous Drain Current at 25°C
423A Continuous Drain Current at Case Temperature
22610pF Maximum Input Capacitance at 15V
3W Power Dissipation at Ambient Temperature
180W Power Dissipation at Case Temperature
-55°C to 175°C Operating Temperature Range
Product Advantages
High current handling capability
Ultra-low on-resistance for improved efficiency
Wide operating temperature range
Surface mount packaging for compact design
Key Technical Parameters
N-Channel MOSFET Transistor
30V Drain-to-Source Voltage
65mOhm Maximum On-Resistance
55A/423A Continuous Drain Current
22610pF Maximum Input Capacitance
3W/180W Power Dissipation
Quality and Safety Features
RoHS3 Compliant
PowerTrench Technology for Enhanced Reliability
Compatibility
Surface Mount Packaging (8-PQFN 5x6)
Application Areas
Power Management
Motor Control
Switching Power Supplies
Industrial Electronics
Automotive Electronics
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent current handling and efficiency with ultra-low on-resistance
Wide operating temperature range for diverse applications
Surface mount packaging for compact, high-density designs
Proven PowerTrench technology for enhanced reliability
RoHS3 compliance for environmental responsibility
