Manufacturer Part Number
FDMC7660S
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel PowerTrench MOSFET for power applications
Product Features and Performance
Low on-resistance (RDS(on)) of 2.2 mΩ
High current carrying capability of up to 20A continuous and 40A at Tc
Low input capacitance (Ciss) of 4325 pF
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent efficiency and thermal performance
Compact PowerTDFN package
Ideal for high-frequency switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs) (Max): ±20V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10V
Quality and Safety Features
Compliant with RoHS and environmental regulations
Reliable and robust design for industrial and automotive applications
Compatibility
Suitable for a wide range of power management and conversion applications
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
DC-DC converters
Class-D audio amplifiers
Industrial and automotive electronics
Product Lifecycle
Current product offering, no known discontinuation plans
Replacement options and upgrades available from the manufacturer
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for improved system design
Compact package and high current capability for space-constrained applications
Reliable and robust design for demanding industrial and automotive environments
Compatibility with a wide range of power management and conversion applications
FDMC7664Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 1