Manufacturer Part Number
FDMC7660
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET for power management applications
Product Features and Performance
30V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
2mOhm Maximum On-Resistance (Rds(on)) at 20A, 10V
20A Continuous Drain Current (Id) at 25°C Ambient
40A Continuous Drain Current (Id) at 25°C Case
4830pF Maximum Input Capacitance (Ciss) at 15V
3W Power Dissipation at 25°C Ambient
41W Power Dissipation at 25°C Case
Product Advantages
Excellent on-resistance and switching performance
High power density and efficiency
Robust design for reliability
Key Technical Parameters
N-Channel MOSFET
-55°C to 150°C Operating Temperature Range
30V Drain to Source Voltage
±20V Gate to Source Voltage
2mOhm Maximum On-Resistance
20A/40A Continuous Drain Current
Quality and Safety Features
RoHS3 Compliant
PowerTrench technology for enhanced reliability
Compatibility
Surface mount package
Tape and reel packaging
Application Areas
Power management
Motor control
Switching power supplies
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation planned
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust design for reliable operation
Suitable for a wide range of power management applications
Readily available in standard packaging
