Manufacturer Part Number
FDMC7664
Manufacturer
onsemi
Introduction
High-performance n-channel MOSFET transistor
Designed for power management and switching applications
Product Features and Performance
Very low on-resistance (4.2 mΩ max)
High current capability (18.8 A continuous drain current at 25°C)
Low gate charge (76 nC max at 10 V)
Wide operating temperature range (-55°C to 150°C)
Low input capacitance (4865 pF max at 15 V)
High power dissipation (2.3 W at 25°C, 45 W at case temperature)
Product Advantages
Excellent efficiency and thermal performance
Compact 8-MLP (3.3x3.3) package
Suitable for space-constrained designs
RoHS3 compliant
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): ±20 V
Threshold Voltage (Vgs(th)): 3 V max at 250 μA
On-Resistance (Rds(on)): 4.2 mΩ max at 18.8 A, 10 V
Quality and Safety Features
ESD protection
Overcurrent and overvoltage protection
Robust design for reliable operation
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
DC-DC converters
Motor drives
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available if needed
Several Key Reasons to Choose This Product
Exceptional efficiency and thermal performance
High current handling capability
Compact and space-saving package
Reliable and robust design
Suitable for a wide range of power management applications