Manufacturer Part Number
FDD5N50TM
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-performance n-channel power MOSFET
Product Features and Performance
Optimized for high-voltage, high-power applications
Low on-resistance for high efficiency
Fast switching for improved system performance
Rugged avalanche capability
Tight Vgs(th) distribution for reliable operation
Product Advantages
Excellent power density and efficiency
Robust design for reliability
Simplifies circuit design
Key Technical Parameters
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30 V
Rds On (Max) @ Id, Vgs: 1.4 Ω @ 2 A, 10 V
Current Continuous Drain (Id) @ 25°C: 4 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Power Dissipation (Max): 40 W (Tc)
Vgs(th) (Max) @ Id: 5 V @ 250 A
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Quality and Safety Features
Robust avalanche capability
Tight Vgs(th) distribution for reliable operation
Operating Temperature Range: -55°C to 150°C (TJ)
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Industrial and consumer electronics
Product Lifecycle
This product is still in active production and not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power density and efficiency
Robust design for reliability
Simplifies circuit design
Optimized for high-voltage, high-power applications
Fast switching for improved system performance
Tight Vgs(th) distribution for reliable operation