Manufacturer Part Number
FDD5N60NZTM
Manufacturer
onsemi
Introduction
The FDD5N60NZTM is a high-performance N-channel MOSFET from onsemi, designed for various power electronics and switching applications.
Product Features and Performance
600V drain-to-source voltage
4A continuous drain current at 25°C
Low on-resistance of 2Ω at 2A, 10V
Fast switching with 13nC maximum gate charge
Wide operating temperature range of -55°C to 150°C
Robust design with superior thermal performance
Product Advantages
Excellent efficiency in power conversion and control
High reliability and long service life
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 2Ω @ 2A, 10V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 600pF @ 25V
Power Dissipation (Pd): 83W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-252AA package for optimal thermal performance
Designed and manufactured to high-quality standards
Compatibility
Suitable for a wide range of power electronics and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and performance in power conversion
Robust and reliable design for long service life
Wide operating temperature range for versatile applications
Compact and thermally efficient TO-252AA package
Compliance with RoHS3 regulations for environmental sustainability