Manufacturer Part Number
FDD5N50NZFTM
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, N-channel power MOSFET in D-Pak package
Product Features and Performance
High drain-source breakdown voltage of 500V
Low on-resistance of 1.75Ω at 10V gate drive
Fast switching speed
Suitable for high-voltage, high-power applications
Product Advantages
Excellent power dissipation capability
Compact D-Pak package
Reliable and robust performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 1.75Ω @ 1.85A, 10V
Continuous Drain Current (Id): 3.7A @ 25°C
Input Capacitance (Ciss): 485pF @ 25V
Power Dissipation (Pd): 62.5W @ Tc
Quality and Safety Features
Designed for high reliability and long lifespan
Meets stringent quality and safety standards
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial automation equipment
Telecommunications equipment
Automotive electronics
Product Lifecycle
This product is currently in production and available
No plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent power handling capability
Compact and reliable D-Pak package
Low on-resistance for high efficiency
Fast switching speed for high-frequency applications
Proven reliability and long lifespan