Manufacturer Part Number
FDD4N60NZ
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-performance N-channel MOSFET
Product Features and Performance
600V drain-source voltage
Low on-resistance of 2.5Ω
Continuous drain current of 3.4A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 510pF
Maximum power dissipation of 114W
Product Advantages
Excellent performance for high-voltage, high-power applications
Efficient power switching
Reliable operation in harsh environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 2.5Ω @ 1.7A, 10V
Continuous Drain Current (Id): 3.4A @ 25°C
Input Capacitance (Ciss): 510pF @ 25V
Power Dissipation (Ptot): 114W @ 25°C
Quality and Safety Features
Robust design for reliable operation
Compliance with safety standards
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Power supplies
Motor drives
Industrial controls
Switched-mode power supplies
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
High-voltage and high-current capability
Low on-resistance for efficient power switching
Wide operating temperature range for versatile applications
Reliable performance and robust design
Compatibility with various high-power systems