FDD4N60NZ - onsemi

Manufacturer Part Number

FDD4N60NZ

Manufacturer

onsemi

Introduction

The FDD4N60NZ is a discrete N-channel MOSFET transistor from onsemi's UniFET-II series, designed for power switching applications.

Product Features and Performance

600V drain-source voltage rating

5Ω maximum on-resistance at 1.7A, 10V

4A maximum continuous drain current at 25°C

510pF maximum input capacitance

114W maximum power dissipation

Product Advantages

High voltage and current handling capability

Low on-resistance for efficient power switching

Wide operating temperature range of -55°C to 150°C

Surface mount package for compact design

Key Technical Parameters

Drain-Source Voltage (Vdss): 600V

Gate-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 2.5Ω @ 1.7A, 10V

Continuous Drain Current (Id): 3.4A @ 25°C

Input Capacitance (Ciss): 510pF @ 25V

Power Dissipation (Ptot): 114W @ Tc

Quality and Safety Features

RoHS3 compliant

TO-252AA (DPak) package for reliable surface mount assembly

Compatibility

Suitable for a wide range of power switching applications

Application Areas

Power supplies

Motor drives

Inverters

Industrial controls

Product Lifecycle

Currently in production

Replacement or upgrade options available from onsemi

Key Reasons to Choose This Product

Excellent voltage and current handling capability

Low on-resistance for efficient power conversion

Wide operating temperature range for reliability

Compact surface mount package for space-constrained designs

RoHS compliance for environmental responsibility