Manufacturer Part Number
FDD5614P
Manufacturer
onsemi
Introduction
The FDD5614P is a P-Channel MOSFET transistor device from onsemi designed for a variety of power management and control applications.
Product Features and Performance
60V Drain-Source Voltage (Vdss)
100mOhm maximum On-Resistance (Rds(on)) at 4.5A, 10V
15A Continuous Drain Current (Id) at 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 759pF at 30V
Low gate charge of 24nC at 10V
Product Advantages
High power handling capability
Efficient power conversion and control
Compact TO-252AA package
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 15A at 25°C
On-Resistance (Rds(on)): 100mOhm at 4.5A, 10V
Input Capacitance (Ciss): 759pF at 30V
Gate Charge (Qg): 24nC at 10V
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with -55°C to 175°C operating temperature range
Compatibility
Surface mount TO-252AA package
Suitable for a variety of power management and control applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial controls
Automotive electronics
Product Lifecycle
The FDD5614P is an active product from onsemi. Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
High power handling capability for efficient power conversion and control
Low on-resistance and input capacitance for improved efficiency
Wide operating temperature range for use in harsh environments
Compact TO-252AA package for space-constrained designs
RoHS3 compliance for environmental responsibility
FDD5614P MOSAMI Semiconductor/onsemi