FDD3N50NZTM - Fairchild Semiconductor

Manufacturer Part Number

FDD3N50NZTM

Manufacturer

Fairchild (onsemi)

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

TO-252, (D-Pak) package

TO-252-3, DPak (2 Leads + Tab), SC-63 package

UniFET-II series

Operating Temperature: -55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss): 500 V

Vgs (Max): ±25V

Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V

MOSFET (Metal Oxide) technology

Current Continuous Drain (Id) @ 25°C: 2.5A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V

Power Dissipation (Max): 40W (Tc)

N-Channel FET Type

Vgs(th) (Max) @ Id: 5V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 10V

Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V

Surface Mount Mounting Type

Product Advantages

High drain-source voltage

Low on-resistance

Compact TO-252 (D-Pak) package

Wide operating temperature range

Key Technical Parameters

Drain to Source Voltage (Vdss): 500 V

Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V

Current Continuous Drain (Id) @ 25°C: 2.5A (Tc)

Power Dissipation (Max): 40W (Tc)

Quality and Safety Features

MOSFET (Metal Oxide) technology

Wide operating temperature range: -55°C ~ 150°C (TJ)

Compatibility

Surface Mount Mounting Type

Application Areas

Suitable for high-voltage, high-power switching applications

Product Lifecycle

Current active product

Replacements and upgrades may be available

Key Reasons to Choose This Product

High drain-source voltage up to 500V

Low on-resistance for efficient power conversion

Compact TO-252 (D-Pak) package for space-constrained designs

Wide operating temperature range for versatile applications