Manufacturer Part Number
FDD3N40TM
Manufacturer
onsemi
Introduction
N-channel MOSFET transistor
Part of the UniFET series
Product Features and Performance
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Current Continuous Drain (Id) @ 25°C: 2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Product Advantages
High breakdown voltage
Low on-resistance
High current capability
Compact DPak (TO-252-3) package
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of power electronics and control applications
Application Areas
Power supply
Motor control
Switching circuits
Inverters
Industrial electronics
Product Lifecycle
Current production, no plans for discontinuation
Replacement parts and upgrades available
Key Reasons to Choose This Product
High voltage, current, and power handling capability
Low on-resistance for efficient operation
Compact package for space-constrained designs
Reliable performance across wide temperature range
RoHS compliance for use in environmentally-conscious applications
