Manufacturer Part Number
FDD3N50NZTM
Manufacturer
onsemi
Introduction
The FDD3N50NZTM is a high-performance N-channel MOSFET transistor from onsemi. It is part of the UniFET-II series and is designed for a wide range of power conversion and switching applications.
Product Features and Performance
500V Drain-to-Source Voltage (Vdss)
5A Continuous Drain Current (Id) at 25°C
5Ω Maximum On-Resistance (Rds(on)) at 1.25A, 10V
280pF Maximum Input Capacitance (Ciss) at 25V
40W Maximum Power Dissipation at Tc
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
High voltage and current handling capabilities
Low on-resistance for improved efficiency
Compact TO-252AA package for surface mount applications
Suitable for various power conversion and switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Maximum Gate-to-Source Voltage (Vgs): ±25V
Threshold Voltage (Vgs(th)): 5V @ 250μA
On-Resistance (Rds(on)): 2.5Ω @ 1.25A, 10V
Input Capacitance (Ciss): 280pF @ 25V
Power Dissipation (Tc): 40W
Quality and Safety Features
RoHS3 Compliant
Suitable for high-temperature and harsh environment applications
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Tape & Reel (TR) packaging
Application Areas
Power conversion and switching applications
Industrial equipment
Automotive electronics
Appliances
Consumer electronics
Product Lifecycle
The FDD3N50NZTM is a current product and is not nearing discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding applications
Low on-resistance for improved efficiency and performance
Compact surface mount package for space-constrained designs
Wide operating temperature range for harsh environments
RoHS3 compliance for environmentally-friendly applications
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