Manufacturer Part Number
FDB52N20TM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance, low-resistance N-channel power MOSFET suitable for a wide range of power conversion and motor control applications.
Product Features and Performance
High drain-source voltage rating of 200V
Low on-resistance of 49mΩ at 26A, 10V
High continuous drain current of 52A at 25°C
Fast switching with low gate charge of 63nC at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable high-voltage operation
Efficient heat dissipation with D2PAK (TO-263) package
Suitable for high-current applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 49mΩ @ 26A, 10V
Continuous Drain Current (Id): 52A @ 25°C
Input Capacitance (Ciss): 2900pF @ 25V
Power Dissipation (Tc): 357W
Quality and Safety Features
Robust design for high reliability
Compliance with industry safety standards
Compatibility
Suitable for a wide range of power conversion and motor control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is an active and widely available component
Replacements and upgrades may be available from the manufacturer or other suppliers
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable high-voltage operation
Efficient heat dissipation in a compact package
Suitable for high-current, high-power applications
Compliance with industry quality and safety standards
