Manufacturer Part Number
FDB52N20TM
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET with low on-resistance and high current capability
Product Features and Performance
N-Channel MOSFET with 200V drain-source voltage rating
Ultra-low on-resistance of 49 mΩ at 26A, 10V
High continuous drain current of 52A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Low gate charge of 63 nC at 10V
Small DPAK (TO-263) surface-mount package
Product Advantages
Excellent energy efficiency due to low on-resistance
High current handling capability
Compact surface-mount package
Wide temperature range for diverse applications
Key Technical Parameters
Drain-Source Voltage (Vds): 200V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 49 mΩ @ 26A, 10V
Continuous Drain Current (Id): 52A @ 25°C case temperature
Input Capacitance (Ciss): 2900 pF @ 25V
Power Dissipation (Pd): 357W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for robust, reliable operation
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial controls
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade parts may be available in the future
Key Reasons to Choose This Product
Excellent energy efficiency due to ultra-low on-resistance
High current handling capability for demanding applications
Compact surface-mount package for space-constrained designs
Wide operating temperature range for reliable performance in diverse environments
RoHS3 compliance for environmentally-friendly use
