Manufacturer Part Number
FDB44N25TM
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET designed for high-voltage, high-current switching applications.
Product Features and Performance
Drain-to-source voltage rating up to 250V
Low on-resistance (RDS(on)) of 69mOhm at 22A, 10V
Continuous drain current (ID) of 44A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge
Product Advantages
Excellent power dissipation capability up to 307W
Robust design for reliable performance in demanding applications
Small package size (DPAK) for high power density
Optimized for high-frequency switching
Key Technical Parameters
Drain-to-Source Voltage (VDS): 250V
Gate-to-Source Voltage (VGS): ±30V
On-Resistance (RDS(on)): 69mOhm @ 22A, 10V
Continuous Drain Current (ID): 44A @ 25°C
Input Capacitance (Ciss): 2870pF @ 25V
Gate Charge (Qg): 61nC @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET design for long-term performance
Compatibility
Suitable for a wide range of high-voltage, high-current switching applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial automation and control
Lighting ballasts
Automotive electronics
Product Lifecycle
This product is an actively supported and available MOSFET from onsemi.
Key Reasons to Choose This Product
Excellent power handling and thermal performance
Robust and reliable design for demanding applications
Small package size for high power density
Optimized for high-frequency switching
Proven onsemi quality and reliability
