Manufacturer Part Number
FDB28N30TM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
High drain-to-source voltage up to 300V
Low on-resistance of 129mΩ @ 14A, 10V
High continuous drain current up to 28A at 25°C
Fast switching with gate charge of 50nC @ 10V
Wide operating temperature range from -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable high-voltage operation
Capable of handling high current levels
Fast switching and low gate charge for improved efficiency
Wide temperature tolerance for diverse applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 300V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 129mΩ @ 14A, 10V
Continuous Drain Current (Id): 28A at 25°C
Input Capacitance (Ciss): 2250pF @ 25V
Power Dissipation (Tc): 250W
Quality and Safety Features
Robust TO-263 package for reliable operation
Compliant with RoHS and REACH regulations
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and automotive power electronics
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement options available from onsemi
Key Reasons to Choose This Product
High power density and efficiency due to low on-resistance
Reliable high-voltage operation for demanding applications
Capable of handling high current levels for powerful systems
Fast switching and low gate charge for improved efficiency
Wide temperature tolerance for use in diverse environments
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