Manufacturer Part Number
FDB33N25TM
Manufacturer
onsemi
Introduction
The FDB33N25TM is a N-Channel MOSFET transistor from onsemi's UniFET series, designed for high-power applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 250V
Continuous Drain Current (Id) of 33A at 25°C
On-State Resistance (Rds(on)) of 94mΩ at 16.5A, 10V
Input Capacitance (Ciss) of 2135pF at 25V
Power Dissipation (Tc) of 235W
Gate Charge (Qg) of 48nC at 10V
Product Advantages
High voltage and current handling capability
Low on-state resistance for improved efficiency
Suitable for high-power applications
Key Technical Parameters
N-Channel MOSFET
Vgs(th) of 5V at 250A
Operating temperature range of -55°C to 150°C
DPAK (TO-263) package
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for reliable surface mount assembly
Compatibility
Suitable for a wide range of high-power applications, including power supplies, motor drives, and industrial controls.
Application Areas
Power conversion and control
Motor drives
Industrial and commercial equipment
Product Lifecycle
Current production
Replacement or upgrade options available from onsemi
Key Reasons to Choose This Product
High voltage and current capability
Low on-state resistance for improved efficiency
Reliable DPAK (TO-263) package
Suitable for a wide range of high-power applications
RoHS3 compliance for environmental responsibility
FDB33N25AMI Semiconductor/onsemi