Manufacturer Part Number
FDB28N30TM
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a transistor - FET, MOSFET - Single.
Product Features and Performance
N-Channel MOSFET with a drain-to-source voltage rating of 300V
Continuous drain current of 28A at 25°C
On-state resistance (RDS(on)) of 129mΩ at 14A, 10V
Input capacitance (Ciss) of 2250pF at 25V
Power dissipation of 250W at Tc
Gate-to-source voltage (Vgs) range of ±30V
Threshold voltage (Vgs(th)) of 5V at 250A
Gate charge (Qg) of 50nC at 10V
Product Advantages
High voltage and current handling capabilities
Low on-state resistance for improved efficiency
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 300V
Gate-to-Source Voltage (Vgs): ±30V
On-State Resistance (RDS(on)): 129mΩ @ 14A, 10V
Continuous Drain Current (ID): 28A @ 25°C
Input Capacitance (Ciss): 2250pF @ 25V
Power Dissipation (Pd): 250W @ Tc
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for surface mount assembly
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Suitable for use in power conversion, motor control, and other high-power electronic systems
Product Lifecycle
Current product, no discontinuation or replacement information available
Several Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for improved efficiency
Wide operating temperature range
RoHS3 compliant for use in various applications
DPAK (TO-263) surface mount package for easy integration
FDB33N25AMI Semiconductor/onsemi