Manufacturer Part Number
FDB050AN06A0
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-Channel power MOSFET in a D2PAK (TO-263) package
Product Features and Performance
Operates in a wide temperature range of -55°C to 175°C
High drain-to-source voltage of 60V
Low on-state resistance (Rds(on)) of 5mΩ @ 80A, 10V
High current rating of 18A (Ta) and 80A (Tc)
Fast switching speed
Low gate charge (Qg) of 80nC @ 10V
Product Advantages
Excellent thermal management due to D2PAK package
Efficient power conversion and low power losses
Reliable and robust performance
Suitable for high-power, high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 5mΩ @ 80A, 10V
Continuous Drain Current (Id): 18A (Ta), 80A (Tc)
Input Capacitance (Ciss): 3900pF @ 25V
Power Dissipation (Tc): 245W
Quality and Safety Features
Designed and manufactured to high quality standards
Robust construction for reliable operation
Complies with relevant safety and environmental regulations
Compatibility
Suitable for a wide range of high-power, high-frequency switching applications
Can be used in power supplies, motor drives, and other power electronic systems
Application Areas
Power supplies
Motor drives
Inverters
Switching-mode power supplies
Industrial and automotive electronics
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Excellent thermal management and power dissipation capabilities
Low on-state resistance for efficient power conversion
Fast switching speed for high-frequency applications
Reliable and robust performance across a wide temperature range
Suitable for a variety of high-power, high-frequency switching applications
