Manufacturer Part Number
FDB050AN06A0
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high current handling capability.
Product Features and Performance
60V drain to source voltage
-55°C to 175°C operating temperature range
Very low on-resistance of 5mΩ @ 80A, 10V
High continuous drain current of 18A at 25°C
High current capability of 80A at 25°C case temperature
Low input capacitance of 3900pF @ 25V
High power dissipation of 245W at case temperature
Product Advantages
Excellent power efficiency due to low on-resistance
High current handling capability
Wide temperature range operation
Compact DPAK (TO-263) package
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5mΩ @ 80A, 10V
Continuous Drain Current (Id): 18A @ 25°C, 80A @ 25°C (case)
Input Capacitance (Ciss): 3900pF @ 25V
Power Dissipation: 245W @ case temperature
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for enhanced thermal management
Compatibility
Compatible with various power supply, motor control, and power conversion applications
Application Areas
Power supplies
Motor drives
Power conversion circuits
Industrial and automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgraded models may become available in the future.
Key Reasons to Choose This Product
Excellent power efficiency due to ultra-low on-resistance
High current handling capability for demanding applications
Wide operating temperature range for versatile use
Compact and thermally efficient DPAK (TO-263) package
RoHS3 compliance for environmental sustainability
