Manufacturer Part Number
FDB047N10
Manufacturer
onsemi
Introduction
High-performance N-channel PowerTrench MOSFET with low on-resistance and high power density.
Product Features and Performance
Very low on-resistance (4.7 mΩ max at 75 A, 10 V)
High current capability (continuous drain current of 120 A at 25°C)
Low gate charge (210 nC max at 10 V)
Wide operating temperature range (-55°C to 175°C)
High power dissipation (375 W max at Tc)
Fast switching speed
Product Advantages
Excellent performance-to-cost ratio
Compact DPAK (TO-263) package for high power density
Suitable for a wide range of power conversion and control applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100 V
Gate-to-Source Voltage (Vgs): ±20 V
Threshold Voltage (Vgs(th)): 4.5 V max at 250 A
Input Capacitance (Ciss): 15,265 pF max at 25 V
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for reliable surface mount assembly
Compatibility
Suitable for a wide range of power conversion and control applications, such as:
Power supplies
Motor drives
Inverters
Switching regulators
Application Areas
Power conversion
Motor control
Inverters
Switching regulators
Product Lifecycle
This product is currently in production and readily available. onsemi continues to offer updates and improvements to the PowerTrench series, ensuring long-term support and availability.
Key Reasons to Choose This Product
Exceptional performance-to-cost ratio
Compact and efficient DPAK (TO-263) package
High current capability and low on-resistance
Wide operating temperature range
Fast switching speed for improved efficiency
Proven reliability and quality with RoHS3 compliance
