Manufacturer Part Number
BC560CTA
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) - Single
Product Features and Performance
Operating Temperature: 150°C (TJ)
Power Rating: 500 mW
Collector-Emitter Breakdown Voltage: 45 V (Max)
Collector Current: 100 mA (Max)
Collector Cutoff Current: 15 nA (Max)
Collector-Emitter Saturation Voltage: 650 mV @ 5 mA, 100 mA
DC Current Gain (hFE): 420 (Min) @ 2 mA, 5 V
Transition Frequency: 150 MHz
Product Advantages
RoHS3 compliant
Through-hole mounting
Key Technical Parameters
Package: TO-92-3
Lead Form: Formed
Transistor Type: PNP
Quality and Safety Features
RoHS3 compliant
Compatibility
Package: TO-226-3, TO-92-3 (TO-226AA)
Application Areas
General-purpose amplifier and switching applications
Product Lifecycle
Active part, no plans for discontinuation
Key Reasons to Choose This Product
High performance PNP transistor
Suitable for a variety of amplifier and switching applications
Compact and reliable TO-92-3 package
RoHS3 compliant for environmentally-conscious designs