Manufacturer Part Number
BC559CTA
Manufacturer
onsemi
Introduction
The BC559CTA is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.
Product Features and Performance
Power rating of 500 mW
Collector-emitter breakdown voltage of 30 V
Collector current rating of 100 mA
Low collector cutoff current of 15 nA
Typical DC current gain of 420 at 2 mA, 5 V
Transition frequency of 150 MHz
Product Advantages
Robust and reliable performance
Suitable for a wide range of general-purpose applications
RoHS-compliant design
Key Technical Parameters
Package: TO-92-3
Operating temperature range: -55°C to +150°C
Voltage Collector Emitter Breakdown (Max): 30 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 15 nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650 mV @ 5 mA, 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2 mA, 5 V
Frequency Transition: 150 MHz
Quality and Safety Features
RoHS3 compliant
Robust and reliable performance
Compatibility
Suitable for through-hole mounting
Application Areas
General-purpose amplifier and switching applications
Consumer electronics
Industrial controls
Product Lifecycle
The BC559CTA is an active and widely available product from onsemi.
There are no immediate plans for discontinuation, and replacement options are readily available.
Key Reasons to Choose This Product
Reliable and robust performance
Wide operating temperature range
Suitable for a variety of general-purpose applications
RoHS compliance for environmentally-friendly design
Readily available and actively supported by the manufacturer