Manufacturer Part Number
BC559CTA
Manufacturer
Fairchild (onsemi)
Introduction
Bipolar Junction Transistor (BJT)
Small-signal PNP transistor
Product Features and Performance
Designed for general-purpose amplifier and switching applications
High frequency performance with 150 MHz transition frequency
High current gain (hFE) of 420 minimum at 2 mA, 5 V
Low collector-emitter saturation voltage of 650 mV at 5 mA, 100 mA
Low collector cutoff current of 15 nA
500 mW maximum power dissipation
Product Advantages
Reliable and robust performance
Suitable for a wide range of applications
Cost-effective solution
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 30 V
Collector Current (Max): 100 mA
Power Dissipation: 500 mW
Operating Temperature: 150°C (TJ)
Quality and Safety Features
Compliant with RoHS and REACH standards
Manufactured in ISO-certified facilities
Compatibility
Suitable for through-hole mounting
Compatible with TO-92-3 and TO-226-3 (TO-226AA) packages
Application Areas
General-purpose amplifier and switching circuits
Audio, consumer, and industrial electronics
Product Lifecycle
Mature and widely available product
No known plans for discontinuation
Key Reasons to Choose This Product
High-performance and reliable operation
Broad compatibility and versatility
Cost-effective solution for common applications
Backed by Fairchild (onsemi)'s reputation for quality