ZXTP25040DFLTA - Diodes Incorporated

Manufacturer Part Number

ZXTP25040DFLTA

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

SOT-23-3 Package

Wide Operating Temperature Range: -55°C to 150°C

High Power Capability: 350 mW

High Collector-Emitter Breakdown Voltage: 40 V

High Collector Current: 1.5 A

Low Collector Cutoff Current: 50 nA

Low Collector-Emitter Saturation Voltage: 300 mV @ 300 mA, 3 A

High DC Current Gain: 300 @ 10 mA, 2 V

High Transition Frequency: 270 MHz

Product Advantages

Compact Surface Mount Package

Reliable Performance across Wide Temperature Range

Suitable for High Power, High Current Applications

Excellent Switching Characteristics

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 40 V

Collector Current (Max): 1.5 A

Collector Cutoff Current (Max): 50 nA

Collector-Emitter Saturation Voltage: 300 mV @ 300 mA, 3 A

DC Current Gain (Min): 300 @ 10 mA, 2 V

Transition Frequency: 270 MHz

Quality and Safety Features

RoHS3 Compliant

Suitable for Surface Mount Assembly

Compatibility

TO-236-3, SC-59, SOT-23-3 Package Compatible

Application Areas

Switching Applications

Amplifier Applications

Power Management Circuits

Product Lifecycle

Active product

Replacement and upgrade options available

Key Reasons to Choose

High power and current handling capability

Excellent switching performance

Wide operating temperature range

Reliable surface mount package

RoHS3 compliance for environmental responsibility