Manufacturer Part Number
ZXTP25020DFHTA
Manufacturer
Diodes Incorporated
Introduction
This product is a PNP bipolar junction transistor (BJT) with high power handling capacity and high-frequency performance.
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
High power rating: 1.25 W
High collector-emitter breakdown voltage: 20 V
High collector current: 4 A
High DC current gain: 300 (min. at 10 mA, 2 V)
High transition frequency: 290 MHz
Product Advantages
Excellent high-power and high-frequency capabilities
Compact surface mount package (SOT-23-3)
RoHS-compliant design
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 20 V
Collector Current (Max): 4 A
Collector Cutoff Current (Max): 50 nA
Collector-Emitter Saturation Voltage (Max): 180 mV
DC Current Gain (Min): 300
Quality and Safety Features
RoHS3 compliant
Reliable construction and testing
Compatibility
This transistor is compatible with a wide range of electronic circuits and applications that require a high-performance PNP bipolar junction transistor.
Application Areas
Power amplifiers
Switching circuits
Voltage regulators
Audio equipment
Industrial control systems
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer or authorized distributors.
Key Reasons to Choose This Product
Excellent high-power and high-frequency performance
Compact surface mount package for efficient board design
Reliable and RoHS-compliant construction
Wide operating temperature range for diverse applications
High DC current gain for improved circuit performance
Compatibility with a wide range of electronic circuits and applications
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