ZXTP25040DFHTA - Diodes Incorporated

Manufacturer Part Number

ZXTP25040DFHTA

Manufacturer

Diodes Incorporated

Introduction

High-performance PNP bipolar junction transistor (BJT)

Suitable for a wide range of general-purpose amplifier and switching applications

Product Features and Performance

Operates at high frequencies up to 270 MHz

High DC current gain of 300 (min) at 10 mA, 2 V

Low collector-emitter saturation voltage of 220 mV at 300 mA, 3 A

Wide operating temperature range of -55°C to 150°C

Compact SOT-23-3 surface mount package

Product Advantages

Efficient power handling with 1.25 W maximum power dissipation

Robust design with high collector-emitter breakdown voltage of 40 V

Suitable for a variety of analog and digital circuit applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 40 V

Collector Current (Max): 3 A

Collector Cutoff Current (Max): 50 nA

Transition Frequency: 270 MHz

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Reliable performance in a wide range of operating conditions

Compatibility

Compatible with various surface mount technology (SMT) assembly processes

Application Areas

General-purpose amplifier and switching circuits

Audio and power management applications

Telecommunications and industrial control systems

Product Lifecycle

This product is an active and widely available component

Replacement or upgrade options are readily accessible from the manufacturer

Key Reasons to Choose This Product

High-frequency operation up to 270 MHz for efficient circuit design

Robust power handling and high breakdown voltage for reliable performance

Compact surface mount package for space-constrained applications

Wide operating temperature range for diverse environmental conditions

RoHS3 compliance for environmentally conscious design