Manufacturer Part Number
ZXMN10A11GTA
Manufacturer
Diodes Incorporated
Introduction
High-performance N-channel MOSFET transistor suitable for a wide range of power management and switching applications.
Product Features and Performance
Low on-resistance of 350mΩ @ 2.6A, 10V
High drain-source voltage rating of 100V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 274pF @ 50V
Maximum power dissipation of 2W
Product Advantages
Efficient power switching and control
Reliable operation in high-voltage, high-temperature environments
Compact surface-mount package (SOT-223-3)
Compliant with RoHS 3 regulations
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
Drain Current (Id): 1.7A @ 25°C
On-Resistance (Rds(on)): 350mΩ @ 2.6A, 10V
Input Capacitance (Ciss): 274pF @ 50V
Power Dissipation (Pd): 2W @ 25°C
Quality and Safety Features
RoHS 3 compliant
Durable surface-mount packaging (SOT-223-3)
Designed for high-reliability applications
Compatibility
Suitable for a wide range of power management and switching applications
Can be used as a replacement for similar N-channel MOSFET transistors
Application Areas
Power supplies
Motor drives
Lighting control
Battery charging and management
General purpose power switching and control
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgraded models may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable operation in high-voltage, high-temperature environments
Compact and efficient surface-mount package
Compliance with RoHS 3 regulations
Suitability for a wide range of power management and switching applications
ZXMN10A25GTA MOSDiodes Incorporated