Manufacturer Part Number
ZXMN10A25GTA
Manufacturer
Diodes Incorporated
Introduction
N-channel MOSFET transistor in a SOT-223-3 package
Product Features and Performance
100V drain-source voltage
9A continuous drain current
125mOhm maximum on-resistance at 2.9A, 10V
859pF maximum input capacitance at 50V
2W maximum power dissipation
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power switching
Compact SOT-223-3 surface mount package
Key Technical Parameters
Drain-source voltage (Vdss): 100V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 125mOhm @ 2.9A, 10V
Drain current (Id): 2.9A
Input capacitance (Ciss): 859pF @ 50V
Power dissipation (Pd): 2W
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Suitable for surface mount applications
Application Areas
Power switching circuits
Motor drives
Power supplies
Inverters
Product Lifecycle
This product is currently in production and available
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power switching
Compact surface mount package
Wide operating temperature range
RoHS3 compliance for environmental safety
ZXMN10A25GTA MOSDiodes Incorporated