Manufacturer Part Number
ZXMN10A08GTA
Manufacturer
Diodes Incorporated
Introduction
The ZXMN10A08GTA is a N-Channel MOSFET transistor with a drain-source voltage of 100V and a continuous drain current of 2A.
Product Features and Performance
100V Drain to Source Voltage
2A Continuous Drain Current
250mΩ Maximum On-Resistance
405pF Maximum Input Capacitance
7nC Maximum Gate Charge
-55°C to 150°C Operating Temperature Range
Surface Mount Package
Product Advantages
High Voltage and Current Handling Capability
Low On-Resistance for Efficient Power Switching
Wide Operating Temperature Range
Surface Mount Package for Compact Design
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 2A
On-Resistance (Rds(on)): 250mΩ
Input Capacitance (Ciss): 405pF
Gate Charge (Qg): 7.7nC
Quality and Safety Features
RoHS3 Compliant
Reliable MOSFET Technology
Compatibility
This MOSFET can be used in a wide range of applications that require high voltage and current handling capabilities, such as power supplies, motor drives, and switching circuits.
Application Areas
Power Switching
Motor Drives
Power Supplies
Industrial Controls
Automotive Electronics
Product Lifecycle
The ZXMN10A08GTA is an active product and is not nearing discontinuation. Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
High Voltage and Current Handling Capability
Low On-Resistance for Efficient Power Switching
Wide Operating Temperature Range
Reliable MOSFET Technology
RoHS3 Compliance
Availability of Replacement or Upgrade Options
ZXMN10A08GTA MOSDiodes Incorporated