Manufacturer Part Number
MMDT3904-7
Manufacturer
Diodes Incorporated
Introduction
Dual NPN transistor array in a space-saving SOT-363 package
Product Features and Performance
Compact and space-efficient design
Optimized for high-frequency switching and amplification applications
Excellent noise and temperature characteristics
High transition frequency of 300MHz
Product Advantages
Reduced board space requirements
Improved thermal management
Reliable high-frequency performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 40V
Collector Current (Max): 200mA
DC Current Gain (hFE) (Min): 100 @ 10mA, 1V
Transition Frequency: 300MHz
Quality and Safety Features
RoHS non-compliant
Reliable operation in -55°C to 150°C temperature range
Rated for 200mW power dissipation
Compatibility
Compatible with SOT-363 footprint and package
Application Areas
High-frequency switching circuits
Amplifier circuits
Logic gates
Driver circuits
Product Lifecycle
Mature product, no known plans for discontinuation
Replacement or upgrade options available from Diodes Incorporated
Key Reasons to Choose This Product
Compact and space-efficient design
Excellent high-frequency performance
Reliable operation in wide temperature range
Proven track record in various electronic applications