Manufacturer Part Number
MMDT3904-7-F
Manufacturer
Diodes Incorporated
Introduction
Dual NPN bipolar junction transistor (BJT) array
Product Features and Performance
Designed for general-purpose amplifier and switch applications
High frequency response up to 300MHz
Low collector-emitter saturation voltage of 300mV @ 5mA, 50mA
High DC current gain of 100 min. @ 10mA, 1V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact SOT-363 surface mount package
Excellent performance characteristics
Consistent quality and reliability
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 40V
Current Collector (Ic) (Max): 200mA
Current Collector Cutoff (Max): 50nA (ICBO)
Power Max: 200mW
Frequency Transition: 300MHz
Quality and Safety Features
RoHS3 compliant
Reliable performance in various operating conditions
Compatibility
Suitable for general-purpose amplifier and switch applications
Application Areas
Consumer electronics
Industrial control systems
Communication devices
Product Lifecycle
Active product, no plans for discontinuation
Replacement or upgrade parts readily available
Key Reasons to Choose This Product
Exceptional high-frequency performance
Compact surface mount package
Consistent quality and reliability
Wide operating temperature range
RoHS3 compliance for environmental sustainability