MMDT2907A-7-F - Diodes Incorporated

Manufacturer Part Number

MMDT2907A-7-F

Manufacturer

Diodes Incorporated

Introduction

Two PNP Bipolar Junction Transistors (BJT) in a single package

Product Features and Performance

Dual PNP transistors in a single package

High current gain (hFE) of 100 typical at 150mA and 10V

High transition frequency of 200MHz

Low collector-emitter saturation voltage (VCE(sat)) of 1.6V at 50mA and 500mA

Low collector cutoff current (ICBO) of 10nA

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact size in a space-saving 6-pin SOT-363 package

Excellent performance characteristics for various analog and switching applications

RoHS-compliant and halogen-free for environmentally-friendly use

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 60V

Collector Current (IC): 600mA

Power Dissipation: 200mW

Transition Frequency (fT): 200MHz

Quality and Safety Features

Compliant with RoHS3 directive for hazardous substance restrictions

Reliable performance and long-term stability

Compatibility

Compatible with a wide range of electronic circuits and systems requiring dual PNP transistors

Application Areas

Analog and digital circuits

Amplifiers and switches

Biasing and level shifting

Pullup and pulldown functions

Product Lifecycle

Currently in active production

Replacement or upgrade options available if needed

Several Key Reasons to Choose This Product

Compact and space-saving package

High-performance transistor characteristics

Wide operating temperature range

RoHS compliance for environmentally-friendly use

Proven reliability and long-term stability