MMDT2227-7-F - Diodes Incorporated

Manufacturer Part Number

MMDT2227-7-F

Manufacturer

Diodes Incorporated

Introduction

Bipolar Junction Transistor (BJT) Arrays

Product Features and Performance

Supports high-speed switching and amplification

Optimized for low-noise, high-frequency applications

Features low collector-emitter saturation voltage

Provides excellent current gain and transition frequency

Product Advantages

Compact 6-pin TSSOP/SOT-363 package

Robust design for reliable operation

Efficient thermal management

Wide operating temperature range

Key Technical Parameters

Power Rating: 200mW

Collector-Emitter Breakdown Voltage: 40V, 60V

Collector Current: 600mA

Collector Cutoff Current: 10nA

Collector-Emitter Saturation Voltage: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA

DC Current Gain: 100 @ 150mA, 10V

Transition Frequency: 300MHz, 200MHz

Quality and Safety Features

RoHS3 compliant

Meets stringent quality and reliability standards

Compatibility

Suitable for surface mount applications

Application Areas

High-speed switching and amplification circuits

RF and analog signal processing

Portable electronics

Industrial control systems

Product Lifecycle

Current product, no indication of discontinuation

Replacements and upgrades may be available

Key Reasons to Choose This Product

Optimized for high-frequency, low-noise performance

Compact and efficient package design

Wide operating temperature range for versatile applications

Robust and reliable construction for long-term use

Compliance with RoHS3 regulations for environmentally-friendly design