Manufacturer Part Number
MMDT2222A-7-F
Manufacturer
Diodes Incorporated
Introduction
High-performance dual NPN bipolar junction transistor (BJT) array
Product Features and Performance
Dual NPN transistors in a single package
Optimized for high-frequency and high-speed switching applications
High transition frequency of 300 MHz
Low collector-emitter saturation voltage of 1V @ 50 mA, 500 mA
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact size and surface-mount packaging for efficient PCB utilization
Matched and well-controlled electrical characteristics for reliable and consistent performance
Suitable for high-frequency and high-speed applications
Key Technical Parameters
Power rating: 200 mW
Collector-emitter breakdown voltage: 40 V
Collector current (max): 600 mA
Collector cutoff current (max): 10 nA
DC current gain: 100 min @ 150 mA, 10 V
Quality and Safety Features
RoHS3 compliant
Manufactured in an ISO-certified facility
Compatibility
Compatible with standard surface-mount assembly processes
Application Areas
High-speed switching circuits
Logic gates
Amplifiers
Instrumentation
Industrial control systems
Product Lifecycle
This product is currently in production and available.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent high-frequency and high-speed performance
Low saturation voltage for efficient power usage
Compact and space-saving surface-mount package
Reliable and consistent electrical characteristics
Wide operating temperature range for versatile applications