Manufacturer Part Number
FZT655TA
Manufacturer
Diodes Incorporated
Introduction
NPN Bipolar Junction Transistor (BJT)
Designed for power amplifier and switching applications
Product Features and Performance
High voltage transistor
High power handling capability up to 2W
High current handling up to 1A
High current gain (hFE) of 50 or more
High transition frequency up to 30MHz
Suitable for power amplifier and switching applications
Product Advantages
Robust design for reliable performance
Compact surface mount package (SOT-223-3)
RoHS compliant
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 150V
Collector Current (IC): 1A
Power Dissipation: 2W
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable performance under high voltage and current conditions
Compatibility
Suitable for a wide range of power amplifier and switching applications
Application Areas
Power amplifiers
Switching circuits
Power supplies
Motor control
Industrial and consumer electronics
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
High voltage and current handling capability
Compact surface mount package
Robust and reliable performance
Suitable for a wide range of power applications
RoHS compliance for environmental friendliness