Manufacturer Part Number
FZT653TC
Manufacturer
Diodes Incorporated
Introduction
The FZT653TC is a high-performance NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated.
Product Features and Performance
High-power handling capability up to 2 watts
Wide operating temperature range of -55°C to 150°C
High collector-emitter breakdown voltage of 100V
High collector current rating of up to 2A
High current gain (hFE) of at least 100 at 500mA, 2V
High transition frequency of 175MHz
Low collector-emitter saturation voltage of 500mV at 200mA, 2A
Product Advantages
Excellent power handling and thermal performance
Suitable for high-voltage and high-current applications
High switching speed and frequency capability
Robust and reliable design
Key Technical Parameters
Power Rating: 2W
Collector-Emitter Breakdown Voltage: 100V
Collector Current: 2A
Current Gain (hFE): Minimum 100 at 500mA, 2V
Transition Frequency: 175MHz
Collector-Emitter Saturation Voltage: 500mV at 200mA, 2A
Quality and Safety Features
RoHS3 compliant
Manufactured in a ISO-certified facility
Rigorous quality control and testing procedures
Compatibility
Surface mount package (SOT-223-3)
Suitable for a wide range of electronic circuit designs
Application Areas
Power amplifiers
Switching circuits
Motor control
Industrial automation
Telecommunications equipment
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent power handling and thermal performance
Wide operating temperature range
High voltage and current ratings
Fast switching speed and high frequency capability
Robust and reliable design
RoHS compliance and high-quality manufacturing
