Manufacturer Part Number
FZT653TA
Manufacturer
Diodes Incorporated
Introduction
Diodes Incorporated's FZT653TA is a high-performance NPN bipolar junction transistor (BJT) designed for a wide range of applications.
Product Features and Performance
Power handling capacity up to 2 watts
Collector-emitter breakdown voltage of 100 volts
Collector current rating of up to 2 amps
Transition frequency of 175 MHz
Minimum DC current gain of 100 at 500 mA, 2 V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling and switching capabilities
High-speed operation suitable for various electronic circuits
Robust construction and reliability for long-term use
Compact surface-mount (SOT-223-3) package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 100V
Collector Current (IC): 2A
Collector Cutoff Current (ICBO): 100nA
Collector-Emitter Saturation Voltage (VCE(sat)): 500mV
DC Current Gain (hFE): 100 (min) @ 500mA, 2V
Transition Frequency (fT): 175MHz
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Reliable performance and long lifespan
Compatibility
Suitable for a wide range of electronic applications, including power supplies, amplifiers, switches, and more.
Application Areas
Power amplifiers
Switch-mode power supplies
Motor control circuits
General-purpose amplification and switching
Product Lifecycle
Currently in active production
Replacement and upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent power handling and high-speed capabilities
Robust and reliable performance in various applications
Compact surface-mount package for efficient board layout
Compliance with RoHS3 environmental standards
Availability of long-term support and potential upgrade options
