FMMT596TA - Diodes Incorporated

Manufacturer Part Number

FMMT596TA

Manufacturer

Diodes Incorporated

Introduction

High voltage, high frequency PNP bipolar junction transistor (BJT)

Product Features and Performance

High voltage rating up to 200V

High frequency capability up to 150MHz

High DC current gain of 85 min. @ 250mA, 10V

Low collector-emitter saturation voltage of 350mV max. @ 25mA, 250mA

Wide operating temperature range of -55°C to 150°C

Product Advantages

Robust high voltage and high frequency performance

Efficient power handling with low saturation voltage

Wide temperature range for diverse applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 200V

Collector Current (max): 300mA

Collector Cutoff Current (max): 100nA

Power Dissipation (max): 500mW

Transition Frequency: 150MHz

Quality and Safety Features

RoHS3 compliant

Reliable performance in industrial and automotive applications

Compatibility

Compatible with SOT-23-3 package footprint

Can be used as a replacement or upgrade for similar BJT transistors

Application Areas

Amplifiers

Switches

Drivers

Power supplies

Industrial and automotive electronics

Product Lifecycle

This product is an active and commonly available component

Replacement or upgraded versions may become available in the future

Key Reasons to Choose This Product

High voltage and high frequency capabilities

Efficient power handling with low saturation voltage

Wide temperature range for diverse applications

Reliable RoHS3 compliant performance

Compatible with common SOT-23-3 package footprint