Manufacturer Part Number
FMMT593QTA
Manufacturer
Diodes Incorporated
Introduction
The FMMT593QTA is a PNP bipolar junction transistor (BJT) from Diodes Incorporated, designed for a variety of electronic applications.
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
Maximum collector-emitter voltage of 100V
Maximum collector current of 1A
Low collector-emitter saturation voltage of 300mV @ 50mA, 500mA
Minimum DC current gain of 100 @ 500mA, 5V
Transition frequency of 50MHz
Surface mount package (SOT-23)
Product Advantages
Robust performance across a wide temperature range
High voltage and current handling capabilities
Low saturation voltage for efficient operation
Suitable for high-frequency applications
Compact surface mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 100V
Collector Current (max): 1A
Collector Cutoff Current (max): 100nA
DC Current Gain (min): 100 @ 500mA, 5V
Transition Frequency: 50MHz
Power Dissipation (max): 500mW
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Packaged in tape and reel for automated assembly
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Power supplies
Amplifiers
Switches
Driving inductive loads
General-purpose electronics
Product Lifecycle
Current production model
Availability of replacement or upgraded models may vary, check with manufacturer for latest information
Several Key Reasons to Choose This Product
Wide operating temperature range for reliability in diverse environments
High voltage and current handling capabilities for versatile applications
Low saturation voltage for efficient power conversion
Suitable for high-frequency applications with 50MHz transition frequency
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmental responsibility
FMMT593 100-300Cj
FMMT591TAPBFDiodes Incorporated