FMMT593TA - Diodes Incorporated

Manufacturer Part Number

FMMT593TA

Manufacturer

Diodes Incorporated

Introduction

The FMMT593TA is a PNP bipolar junction transistor (BJT) manufactured by Diodes Incorporated.

Product Features and Performance

Operating temperature range of -55°C to 150°C

Max power dissipation of 500 mW

Collector-emitter breakdown voltage of up to 100 V

Collector current (max) of 1 A

Collector cutoff current (max) of 100 nA

Vce saturation voltage (max) of 300 mV @ 50 mA, 500 mA

DC current gain (hFE) of at least 100 @ 500 mA, 5 V

Transition frequency of 50 MHz

Product Advantages

Robust performance across wide temperature range

High breakdown voltage and current capability

Low saturation voltage for efficient switching

High current gain for amplification applications

High-frequency operation for high-speed circuits

Key Technical Parameters

Collector-emitter breakdown voltage: 100 V

Collector current (max): 1 A

Collector cutoff current (max): 100 nA

Vce saturation voltage (max): 300 mV

DC current gain (hFE): 100 (min)

Transition frequency: 50 MHz

Quality and Safety Features

RoHS3 compliant

Packaged in industry-standard SOT-23-3 surface mount housing

Compatibility

Suitable for a wide range of electronic circuit designs requiring high-performance PNP transistors

Application Areas

Amplifiers

Switches

Inverters

Drivers

Power supplies

General-purpose electronic circuits

Product Lifecycle

This product is an active and widely available part from Diodes Incorporated.

Replacement or upgraded options may become available in the future as technology advances.

Key Reasons to Choose This Product

Excellent electrical performance characteristics, including high breakdown voltage, high current capability, and low saturation voltage

Wide operating temperature range for reliable operation in diverse environments

Surface mount packaging for easy integration into compact electronic designs

Availability and long-term support from a reputable manufacturer, Diodes Incorporated