Manufacturer Part Number
FMMT417TD
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
Package: SOT-23-3
Operating Temperature: -55°C to 150°C
Power Rating: 330 mW
Collector-Emitter Breakdown Voltage: 100 V
Collector Current: 500 mA
Collector Cutoff Current: 100 nA
Collector-Emitter Saturation Voltage: 500 mV
DC Current Gain: 25
Transition Frequency: 40 MHz
Product Advantages
High voltage and current capabilities
Avalanche mode operation
Surface mount packaging
Key Technical Parameters
Package: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Package Type: Tape & Reel (TR)
Transistor Type: NPN Avalanche Mode
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for various electronic circuit applications
Application Areas
Suitable for use in a wide range of electronic circuits and devices
Product Lifecycle
Currently available
Replacements or upgrades may be available in the future
Key Reasons to Choose
High voltage and current handling capabilities
Avalanche mode operation for robust performance
Small surface mount package for compact design
RoHS3 compliance for environmental friendliness