Manufacturer Part Number
FMMT413TD
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Single Transistor Bipolar (BJT), NPN Avalanche Mode
Product Features and Performance
Operating Temperature Range: -55°C to 150°C
Power Rating: 330 mW
Collector-Emitter Breakdown Voltage (Max): 50 V
Collector Current (Max): 100 mA
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage (Max): 150 mV
DC Current Gain (hFE) (Min): 50
Transition Frequency: 150 MHz
Product Advantages
Suitable for high-speed switching and amplification applications
Avalanche mode operation allows for increased voltage handling
Key Technical Parameters
Package: SOT-23-3
RoHS Compliant
Quality and Safety Features
Meets RoHS3 compliance standards
Compatibility
Compatible with various surface mount applications
Application Areas
High-speed switching
Amplification
Radio frequency (RF) circuits
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
Optimized for high-speed, high-voltage switching and amplification
Robust avalanche mode operation
Compact surface mount package
Proven reliability and performance
FMMT4402TADiodes Incorporated
FMMT4123TADIODES/ZETEX