Manufacturer Part Number
FMMT415TD
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Transistor Bipolar (BJT) Single
Product Features and Performance
RoHS3 Compliant
SOT-23-3 Surface Mount Packaging
Wide Operating Temperature Range: -55°C to 150°C
High Power Handling: 330 mW
High Collector-Emitter Breakdown Voltage: 100 V
High Collector Current: 500 mA
Low Collector Cutoff Current: 100 nA
Low Collector-Emitter Saturation Voltage: 500 mV
Avalanche-Mode NPN Transistor
High DC Current Gain: 25
High Transition Frequency: 40 MHz
Product Advantages
Compact surface mount package
Excellent power handling and voltage capabilities
Low leakage and saturation voltage
Suitable for high-speed switching applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 100 V
Collector Current: 500 mA
Collector Cutoff Current: 100 nA
Collector-Emitter Saturation Voltage: 500 mV
DC Current Gain: 25
Transition Frequency: 40 MHz
Quality and Safety Features
RoHS3 Compliant
Suitable for high-temperature operations
Compatibility
Compatible with various electronic circuit designs and applications
Application Areas
Suitable for high-speed switching, amplifier, and power management circuits
Applicable in various electronic devices and systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available
Several Key Reasons to Choose This Product
Excellent power handling and voltage capabilities
Low leakage and saturation voltage for efficient operation
High switching speed and frequency performance
Compact surface mount package for space-saving design
Compliance with RoHS3 regulations for environmental sustainability
Suitable for high-temperature and demanding applications